Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• . Experimental IM bilayer thin films were sputtered on n-type silicon(111) substrates for structural, morphological, and electrical characterization. In addition, the bilayer thin films were deposited on glass substrates for optical characterization. This process was performed using RF magnetron sputtering

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. Keywords: electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium; Introduction The chalcogen tellurium (Te) is a rare element (0.002 ppm) in the

• -nanostructure back-gate FETs, as well as the electrical resistivity of the nanostructures as a function of temperature from 5 to 400 K. The transport measurements were carried out in a low-noise custom-made system for electrical characterization of FET devices [16][17][18]. FET devices were built by laser

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• triplicate. The mass of aptamers bound to each protein was calculated and the results were plotted using the software Graph Pad Prism 5. Statistical analysis was performed using the Kruskal–Wallis test with Dunn’s post-test. Device fabrication and electrical characterization We carried out the electrical

• . The electrical characterization for both demonstration of graphene functionalization with ZIKV60 aptamers and ZIKV NS1 protein detection consisted of DC measurements of the graphene transistors transfer characteristics. We conducted these measurements via electrolyte gating, utilizing a Keysight

• the human serum already contains a plethora of interfering biomolecules [25]. Figure S1b (Supporting Information File 1) exhibits a schematic illustration of the resulting ZIKV60-functionalized graphene devices and the experimental setup used in the electrical characterization for ZIKV NS1 protein

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• Lite). Additionally, circular 1 mm gold pads were evaporated on top of the prepared structure to allow for electrical characterization. The average material composition of the gradient thin film was determined using X-ray microanalysis employing an EDAX Genesis energy-dispersive spectrometer (EDS) as

Electrical, electrochemical and structural studies of a chlorine-derived ionic liquid-based polymer gel electrolyte

• Ashish Gupta,
• Amrita Jain,
• Manju Kumari and
• Santosh K. Tripathi

Beilstein J. Nanotechnol. 2021, 12, 1252–1261, doi:10.3762/bjnano.12.92

• obtained from X-ray diffraction of ionic liquid-based polymer gel electrolytes. Non-linear fitting parameters from the VTF equation. Acknowledgements All authors are thankful to Jaypee University of Engineering and Technology India for providing electrochemical and electrical characterization facilities

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• imaging performed after the electrical characterization (Figure 8). Besides process variations, these variations observed in Vthreshold(t) and Lamorphized can be ascribed to variations in the initial Rcrystalline values (shown in Table 1 for the 25 measured cells) due to the random arrangement of the

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• , will serve to trap carriers at the interface and will reduce the crowded injection current at the contact [43]. This may be empirically confirmed with a combination of low-temperature electrical characterization and capacitance measurements [44][45] in future work. Conclusion In summary, we have

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• the highly delocalized macrocycles. The competing interfacial van der Waals forces and molecule–molecule interactions lead to the formation of a small fraction of triclinic moieties. The nanoscale electrical characterization of the thin PbPc layer on graphene by means of conducting atomic force

• intermolecular interactions on the top layers, influences the orientation of PbPc molecules leading to the formation of a very small fraction of triclinic moieties in edge-on or tilted configuration. Further, electrical characterization of these films in a vertical configuration shows enhanced conduction

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• macroscopic electrical characterization (Figure S3 in Supporting Information File 1) remains however below the state-of-the-art for PTB7:PC71BM-based devices. We will describe later that an imperfect morphology may be the origin of the reduced performance. In a first step, the dynamic photoresponse of the

• successive spectroscopic curves. In this configuration, the cathode defines an equipotential level. In other words, the dynamic SP photoresponse is not position-dependent. Furthermore, here, the SPV can be directly compared to the open-circuit voltage deduced from the macroscopic electrical characterization

• . Figure 5a shows a measurement of the SPV performed by applying a long cw light pulse (515 nm) to the sample. The calculated SPV of about 650 mV at 48 mW∙cm−2 and 515 nm is close to the open-circuit voltage of 680 mV upon one sun illumination as deduced from the electrical characterization. The SPV

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• to fire 500 ps long set/reset voltage pulses and acquire the resulting resistive switching at 1 GHz bandwidth. Results and Discussion Structural and electrical characterization Memristive nanojunctions were created by approaching a mechanically sharpened PtIr tip of a custom-built scanning tunneling

• microscope (STM) to the AgI-coated thin film structure schematically illustrated in the lower inset of Figure 1a. The photosensitive AgI layers were formed promptly before electrical characterization by exposing a 100 nm thick Ag layer to iodine vapor at 40°C and ambient pressure for 30 s in the dark

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• covered with 285 nm of SiO2 for Raman spectroscopy, ADRDM and electrical characterization. The substrate had pre-patterned alignment grids and 12 electrodes (20 nm Gr/180 nm Au). XPS analysis was performed on a VG Scientific ESCALAB 250 device. The TEM images and SAED patterns were performed with on a FEI

• . Electrical characterization All of the electrical characterization experiments were performed using a Keysight B1500A semiconductor device analyzer and a probe station with micromanipulation probes. Topological phase and characterization of 1T’-WTe2. a) Side and top views of lattice structures of 1T’-WTe2

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• ). Structural and electrical characterization Scanning electron microscopy (SEM) was performed in a Quanta250 environmental SEM FEG from FEI, and SEM FEG ZEISS GeminiSEM 500 to study the surface morphology and determine the LMO thickness using the cross section of the films. The cationic film composition was

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

• Franziska Ringleb,
• Stefan Andree,
• Berit Heidmann,
• Jörn Bonse,
• Katharina Eylers,
• Owen Ernst,
• Torsten Boeck,
• Martina Schmid and
• Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

• . Cross section of a CISe micro absorber island after processing to a micro cell imaged by tilted-view SEM. Note that the different materials were artificially post-colorized to enhance their visibility. The height of the CISe absorber is ca.1 µm. Electrical characterization with different light

• concentration factors for a CISe microcell from the nucleation approach: a) IV curves, b) ISC and FF, c) Voc and η. Electrical characterization under various light concentration factors for CIGSe micro cell from nucleation approach: a) IV curves, b) ISC and FF, c) VOC and η. Electrical characterization under

Filling nanopipettes with apertures smaller than 50 nm: dynamic microdistillation

• Evelyne Salançon and
• Bernard Tinland

Beilstein J. Nanotechnol. 2018, 9, 2181–2187, doi:10.3762/bjnano.9.204

• different methods: first, by using the velocity of the water meniscus and an optical microscopy view of the tip [14]; second, by using scanning electron microscopy (SEM) after capillary use (this method is destructive); third, via electrical characterization of the nanopipette. Figure 1 shows the SEM view

A variable probe pitch micro-Hall effect method

• Maria-Louise Witthøft,
• Frederik W. Østerberg,
• Janusz Bogdanowicz,
• Rong Lin,
• Henrik H. Henrichsen,
• Ole Hansen and
• Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

• mobility. Keywords: four-point probes; Hall effect; metrology; mobility; variable Probe Pitch; Introduction Materials characterization becomes increasingly difficult as the dimensions of transistors continue to decrease. Although three dimensional electrical characterization is the ultimate goal of

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• source electrode because charge carriers here first collide with grain boundaries to initiate atom diffusion as it can be seen by number of voids present in this electrode (Figure 2c). Electrical characterization The electrical characterization of the tunneling feedgap forming the active area of the

Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology. Keywords: critical dimension metrology; electrical characterization; finFET; micro four-point probe; sheet resistance; Introduction The transition from planar to three-dimensional transistor

• describe further developments of the μ4pp technique, as implemented by the CAPRES A300 tool, which enable the electrical characterization of single nanometer-wide fins in dense fin arrays (pitch < 200 nm) with high precision and repeatability. First, we describe the general concept of how to establish and

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• a distance of 400 nm, base diameter of 80 nm and a height of 250 nm. (b) Measured and simulated scattering spectra of the array. Supporting Information Supporting Information File 56: Additional information on EDX measurements, SAED indexing, and electrical characterization. Acknowledgements The

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

• Karolline A. S. Araujo,
• Luiz A. Cury,
• Matheus J. S. Matos,
• Thales F. D. Fernandes,
• Luiz G. Cançado and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90

• used for morphological (bare tip) and electrical characterization (Au-coated tips), respectively. The ScanAsyst-Air probes have typical resonant frequency ω0 = 70 kHz and a spring constant k = 0.4 N/m. During operation in peak force mode, they are oscillated at a frequency f = 2 kHz with a typical

• fitting analysis are shown in the first line of the table. Supporting Information Supporting Information File 66: Supporting Information File 1 contains morphological characterization of retinoic acid deposited on different substrates; morphological and electrical characterization of graphite microplate

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• integration of CeO2 as dielectric material in capacitors. In this respect, the electrical characterization of our CeO2 films in a metal–insulator–metal (MIM) capacitor would be useful to study the electrical behavior of CeO2. However, this is beyond the scope of our study. On a more fundamental point, the

Deposition of exchange-coupled dinickel complexes on gold substrates utilizing ambidentate mercapto-carboxylato ligands

• Martin Börner,
• Laura Blömer,
• Marcus Kischel,
• Peter Richter,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Pablo F. Siles,
• Maria E. N. Fuentes,
• Carlos C. B. Bufon,
• Daniel Grimm,
• Oliver G. Schmidt,
• Daniel Breite,
• Bernd Abel and
• Berthold Kersting

Beilstein J. Nanotechnol. 2017, 8, 1375–1387, doi:10.3762/bjnano.8.139

• -rolled-up nanomembranes [63][64]. Standard two point measurements at room temperature were carried out for the electrical characterization of the heterojunctions (Supporting Information File 1). The data analysis provides a characteristic transition voltage (VT) of 0.50 ± 0.05 V, a value which, albeit

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• the charge transport properties of the crystalline nanopyramids, an electrical characterization is performed by measuring the current–voltage (I–V) characteristics. As shown in Figure 2a, the strong charge transfer (CT) between VOPc and F16CuPc causes the heterojunction nanopyramids with double

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• does not significantly influence the magnetoresistance, but it strongly depends on the drain voltage Vd. These trends consolidate the conclusions drawn from the electrical characterization, showing a relatively gate-independent transport behaviour [18]. Due to the charge transfer between the HOMO of

Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition

• Alper Balkan,
• Efe Armagan and
• Gozde Ozaydin Ince

Beilstein J. Nanotechnol. 2017, 8, 872–882, doi:10.3762/bjnano.8.89

• the annealing temperatures. For humidity experiments, circular gold electrodes were evaporated on the PANI films and the resistance was measured using a two-point probe to ensure consistency with the electrical characterization of the nanotube samples. The diameters of the gold electrodes were

• originating from the Si(100) planes. Each measurement took 4 h for an adequate signal-to-noise ratio. Thickness of the films on Si wafer and glass substrates was measured with a spectroscopic ellipsometer (M-2000, J. A. Woollam) at 65, 70, and 75° within a range of 300–800 nm. For electrical characterization

• , SUPRA VP 35). For the electrical characterization of the PANI thin films and PANI/pHEMA nanotubes, an array of chrome (3 nm) and gold (150 nm) electrodes with a diameter of 200 µm and a spacing of 200 µm were deposited on the nanotubes and thin films using an e-beam evaporator (Torr). Prior to the e

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• of relationships between molecular structure, physical properties and material processing at the nanoscale. Numerous metrologies capable of thermal, mechanical, and electrical characterization at the nanoscale have been demonstrated over the past two decades. However, the ability to perform nanoscale